| 单词 | electron beam accessed memory |
| 释义 | electron beam accessed memoryA memory that is written and read by an electron beam. In the writing action the beam either does, or does not, deposit electrons according to a one or zero input. In the reading action the effect of the beam on the charged or uncharged area is detected.; 一种用电子束进行读／写的存储器。在写操作时,根据输入是1还是0决定电子束是否沉积 电子。在读操作时,则是检测电子束在有电荷区或无电荷区的效应。 |
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